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Researchers at Penn State University and Air Force Research Laboratory used one of the multiple types of Hummingbird Scientific in-situ TEM electrical biasing holders to study failure in GaN/AlGaN high electron mobility transistors. They used the removable sample carrier that provides a flexible platform to perform in-situ TEM biasing experiments to mount their transistor samples on a chip using FIB and visualize off-state failures. Through both TEM imaging, diffraction, and energy dispersive spectroscopy techniques, the researchers show that it is possible to use in-situ TEM to characterize the lattice defects and diffusion of various elements and correlate those to off-state failure modes.
They published their results in Applied Physics Letters.
